ccd linear image sensor s11151-2048 high sensitivity in the ultraviolet region, front-illuminated ccd www.hamamatsu.com 1 structure absolute maximum ratings (ta=25 c, unless otherwise noted) parameter speci cation pixel size (h v) 14 200 m number of total pixels 2056 number of effective pixels 2048 image size (h v) 28.672 0.200 mm horizontal clock phase 2-phase output circuit two-stage mosfet source follower package 24-pin ceramic dip (refer to dimensional outline) window material quartz glass * 1 * 1: resin sealing parameter symbol min. typ. max. unit operating temperature * 2 * 3 topr -50 - +55 c storage temperature * 3 tstg -50 - +70 c output transistor drain voltage v od -0.5 - +25 v reset drain vol tage v rd -0.5 - +18 v test point v ertical input source v oltage v isv -0.5 - +18 v horizontal input source voltage v ish -0.5 - +18 v vertical input gate voltage v igv -10 - +15 v horizontal input gate vol tage v igh -10 - +15 v summing gate voltage v sg -10 - +15 v output gate vol tage v og -10 - +15 v reset gate voltage v rg -10 - +15 v transfer gate voltage v tg -10 - +15 v horizontal shift register clock voltage v p1h , v p2h -10 - +15 v note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum r atings. * 2: p ackage temperature * 3: no condensation despite a front-illuminated ccd, the s11151-2048 offers high sensitivity in the ultraviolet region (200 nm) nearly equal to back-thinned ccd. image lag: 0.1% typ. low dark current low cost spectrometers features applications high sensitivity in the ultraviolet region (spectral response range: 200 to 1000 nm)
ccd linear image sensor s11151-2048 2 operating conditions (ta=25 c) parameter symbol min. typ. max. unit output transistor drain voltage v od 12 13 14 v reset drain voltage v rd 10.5 11 11.5 v test point vertical input source voltage v isv - v rd -v horizontal input source voltage v ish - v rd -v vertical input gate voltage v igv -5 -4 - v horizontal input gate voltage v igh -5 -4 - v summing gate voltage high v sgh 456 v low v sgl -5 -4 -3 output gate voltage v og 234v substrate voltage v ss -0-v reset gate voltage high v rgh 456 v low v rgl -5 -4 -3 transfer gate voltage high v tgh 789 v low v tgl -5 -4 -3 horizontal shift register clock voltage high v p1hh , v p2hh 456 v low v p1hl , v p2hl -5 -4 -3 external load resistance r l 2.0 2.2 2.4 k electrical characteristics (ta=25 c, unless otherwise noted, operating conditions: typ.) parameter symbol min. typ. max. unit signal output frequency * 4 fc - 1 5 mhz line rate lr - 0.48 2.37 khz horizontal shift register capacitance c p1h , c p2h - 220 - pf summing gate capacitance c sg -1 0-p f reset gate capacitance c rg -1 0-p f transfer gate capacitance c tg - 110 - pf charge transfer ef ciency* 5 cte 0.99995 0.99999 - - dc output level * 4 vout - 8.5 - v output impedance * 4 zo - 220 - power consumption * 4 * 6 p - 65 - mw *4: the v alue depends on the load resistance. * 5: charge transfer ef ciency per pixel of ccd shift register, measured at half of the full well capacity * 6: power consumption of the on-chip ampli er plus load resistance electrical and optical characteristics (ta=25 c, unless otherwise noted, operating conditions: typ.) parameter symbol min. typ. max. unit saturation output voltage vsat - fw sv - v full well capacity fw 150 200 - ke - ccd node sensitivity sv 5 6 7 ?v/e - dark current * 7 average of all effective pixels dsave - 700 3500 e - /pixel/s - 4 20 pa/cm 2 maximum of all effective pixels dsmax - 3500 17500 e - /pixel/s - 20 100 pa/cm 2 readout noise * 8 nr - 25 50 e - rms dynamic range * 9 dr 3000 8000 - - spectral response range - 200 to 1000 - nm photoresponse nonuniformity * 10 * 11 prnu - 3 10 % image lag * 10 l - 0.1 1 % *7: dark current is reduced to half f or ev ery 5 to 7 c decrease in temperature. * 8: readout frequency 1 mhz * 9: dynamic range = full well capacity / readout noise * 10: measured at one-half of the saturation output (full well capacity) using led light (peak emission wavelength: 660 nm) fixed pattern noise (peak to peak) signal 100 [%] photoresponse nonuniformity = *11:
ccd linear image sensor s11151-2048 3 spectral response (without window, typical example) * 12 spectral transmittance characteristics of window material kmpdb0303ea * 12: spectral response with quartz glass is decreased according to the spectral transmittance characteristic of window material. wavelength (nm) quantum efficiency (%) (ta=25 c) 0 100 80 90 60 70 40 50 20 30 10 1100 200 300 400 500 600 700 800 900 1000 wavelength (nm) transmittance (%) (typ. ta=25 c) 0 100 80 60 40 20 1100 100 300 400 200 500 600 700 800 900 1000 kmpdc0341eb device structure (conceptual drawing of top view) 15 14 13 2 3 4 6 7 8 9 10 11 12 23 22 21 20 19 16 1 24 17 5 18 photodiode ccd horizontal shift register light-shielded section s2039 s2040 s2041 s2042 s2043 s2044 s2045 s2046 s2047 s2048 s1 s2 s3 s4 s5 s6 s7 s8 s9 s10 d5 d6 d7 d8 d1 d2 d3 d4 kmpdb0372ea
ccd linear image sensor s11151-2048 4 timing chart 1 line period (integration time) tpwr tg p1h rg os tpwv tov r normal readout period dummy readout period * 1 d1 d3, d4, s1...s2048, d5, d6 d2 d7 d8 2 3...2055 2056 p2h sg tpwh, tpws * when making the integration time longer than the normal readout period, to carry away the dark current generated in the ccd horizontal shift register, perform dummy readout after completion of the normal readout until right before rising transfer gate pulse. kmpdc0342ec parameter symbol min. typ. max. unit tg pulse width tpwv 6 8 - s rise and fall times tprv, tpfv 20 - - ns p1h, p2h* 13 pulse width tpwh 100 500 - ns rise and fall times tprh, tpfh 10 - - ns duty ratio - 40 50 60 % sg pulse width tpws 100 500 - ns rise and fall times tprs, tpfs 10 - - ns duty ratio - 40 50 60 % rg pulse width tpwr 10 100 - ns rise and fall times tprr, tpfr 5 - - ns tg-p1h overlap time tovr 1 2 - s * 13: s ymmetrical clock pulses should be o verlapped at 50% of maximum pulse amplitude.
ccd linear image sensor s11151-2048 5 pin connections pin no. symbol function remark (standard operation) 1 os output transistor source r l =2.2 k 2 od output transistor drain +13 v 3 og output gate +3 v 4 sg summing gate same pulse as p2h 5 ss substrate gnd 6 rd reset drain +11 v 7- 8- 9 p2h ccd horizontal register clock-2 +5/-4 v 10 p1h ccd horizontal register clock-1 +5/-4 v 11 - 12 igh test point (horizontal input gate) -4 v 13 igv test point (vertical input gate) -4 v 14 isv test point (vertical input source) connect it to rd. 15 ish test point (horizontal input source) connect it to rd. 16 - 17 ss substrate gnd 18 rd reset drain +11 v 19 - 20 - 21 - 22 - 23 tg transfer gate +8/-4 v 24 rg reset gate +5/-4 v 41.6 0.42 photosensitive area 28.672 0.200 27.94 0.3 2.54 0.13 0.5 0.05 3.0 0.2 10.16 0.25 3.0 0.03 10.03 0.25 1.115 0.1 * 1 0.25 *1: length from upper surface of window to photosensitive surface *2: length from bottom surface of package to photosensitive surface *3: window thickness index mark index mark 0.5 0.05* 3 1.65 0.2* 2 photosensitive surface +0.05 -0.03 24 11 2 13 note: this product is not hermetically sealed and moisture may penetrate inside the package. avoid using or storing this product in an environment where sudden temperature and humidity changes may occur and cause condensation in the package. dimensional outline (unit: mm, tolerance unless otherwise noted: 0.1) kmpda0261ec
ccd linear image sensor s11151-2048 cat. no. kmpd1119e04 nov. 2012 dn www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152-375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: thorshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8- 509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 china: hamamatsu photonics (china) co., ltd.: 1201 tower b, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020, china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of november, 2012. 6 related information www.hamamatsu.com/sp/ssd/doc_en.html precautions ? notice ? image sensors/precautions
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